Elpida and Spansion develop 4-Gigabit NAND flash memory
Elpida Memory and Spansion today announced they have created the industry's first charge-trapping 1.8 V, 4-gigabit SLC (Single Level Cell) NAND Flash memory. This NAND memory, based on Spansion's MirrorBit charge-trapping technology, is being produced at Elpida's Hiroshima factory. The advanced technical expertise and strong cooperation of the two companies has made it possible to develop and manufacture the world's first charge-trapping NAND Flash memory.
Elpida and Spansion develop 4-Gigabit NAND flash memory
Elpida Memory and Spansion today announced they have created the industry's first charge-trapping 1.8 V, 4-gigabit SLC (Single Level Cell) NAND Flash memory. This NAND memory, based on Spansion's ...
Thu 2 Sep 10 from PhysOrg
Toshiba launches 24nm process NAND flash memory
Toshiba Corp. has announced that it today started mass production of NAND flash memories fabricated with 24nm process technology.
Tue 31 Aug 10 from PhysOrg
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