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Novellus Develops New Technology for Depositing Highly Conformal Films

SAN JOSE, Calif. Aug. 16 /PRNewswire-FirstCall/ -- Novellus Systems (Nasdaq: NVLS) announced today that it has developed conformal film deposition (CFD(TM)) technology for depositing 100 percent step coverage dielectric films on structures with aspect ratios of up to 4:1. The innovative CFD technology addresses sub-32nm requirements for front-end-of-line (FEOL) applications such as gate liners and spacers, shallow trench isolation high-k metal gate (HKMG) liners, and spacers used for double patterning applications. Novellus' CFD oxide films possess quality and composition comparable to thermal oxide films, including low leakage, high break-down voltage, and low wet etch rate. (Photo: http://photos.prnewswire.com/prnh/20100816/SF50619) (Photo: http://www.newscom.com/cgi-bin/prnh/20100816/SF50619) Variability in sub-32 nm transistor dimensions is a key area of industry focus due to the impact on device performance. New, highly conformal spacer films have been developed to control these critical dimensions acros

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